发明名称 GATE DRIVE CIRCUIT OF POWER SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To reduce turn-off losses, especially in driving operation. SOLUTION: A DC voltage of an inverter, constituted of a power semiconductor element like an IGBT, is detected via voltage-dividing circuits R4, R5. The detected output Vd is compared with a reference voltage by using a comparator CP1. When the output Vd is at most the reference voltage value, the rate of change of current, di/dt may also be low, so that the turn-off loss is reduced by turning on a switch S3 via an AND gate AN1, by making the gate resistance value of the IGBT as a parallel resistance of resistors R2 and R3 to reduce the resistance.
申请公布号 JP2002125363(A) 申请公布日期 2002.04.26
申请号 JP20000311951 申请日期 2000.10.12
申请人 FUJI ELECTRIC CO LTD 发明人 TAKIZAWA AKITAKE
分类号 H02M1/08;H02M7/5387;H03K17/00;H03K17/56 主分类号 H02M1/08
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