| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability and yield about the electric characteristics and the quality to contribute to a stable supply of more fined and multi-function semiconductor devices, by laminating plasma-reacted organic silane NSG and PSG films on a silicide electrode wiring or an impurity layer in a MOSLSI, etc., and forming a layer insulation film planarized with coat glass. SOLUTION: A plasma-reacted NSG film 20 and PSG film 21 with TEOS are formed on a gate electrode wiring 14 having a Ti silicide surface and an impurity layer 17. Cost glass 22 is spin-coated on the films 20, 21 and annealed at 800 deg.C. Contact holes are formed by wet etching with an HF-containing water solution and anisotropical etching by a reactive ion etcher, and then a metal wiring 23 is formed.
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