| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which reliability is enhanced at the joint of multilayer interconnection. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a first Al alloy interconnection 3a on a silicon oxide film 2, a step for forming a first interlayer insulation film 4 on the first Al alloy interconnection and the silicon oxide film, a step for forming a second Al alloy interconnection 8a on the first interlayer insulation film, a step for forming a second interlayer insulation film 12 on the second Al alloy interconnection and the first interlayer insulation film, a step for making a via hole 4a in the first and second interlayer insulation films such that the first and second Al alloy interconnections touch each other on the end faces at the end part thereof, and a step for burying a W plug 7 in the via hole.
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