| 摘要 |
PROBLEM TO BE SOLVED: To provide an optimum liquid transfer MOCVD process for deposition of a ferroelectric thin film and a dielectric thin film using mixed solvents. SOLUTION: The raw material solution contains a chemical vapor growth precursor and solvent groups fundamentally containing a solvent of a type A containing tetraglyme, triglyme, triethylenetetraamine, N,N,N',N'- tetramethylethylenediamine, N,N,N',N',N",N"-pentamethyldiethylenetriamine and 2,2'-bipyridine, a solvent of a type B containing tetrahydrofuran, butyl ethyl ether, tert-butyl ethyl ether, butyl ether and pentyl ether and a solvent of a type C containing iso-propanol, 2-buthanol, 2-ethyl-1-hexanol, 2-pentanol, toluene, xylene and butyl acetate.
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