SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to control extension of a depletion layer extending between a semiconductor substrate and a resistor layer and to reduce voltage dependence of a resistance value of the resistor layer, by forming an insulation layer and a resistor bias electrode on the resistor layer. CONSTITUTION: The resistor layer of the second conductivity type is formed on a semiconductor substrate(1) of the first conductivity type. The first voltage is applied to one end of the resistor layer and the second voltage is applied to the other end of the resistor layer. The insulation layer is formed on the resistor layer of the second conductivity type. A resistor bias electrode layer(10) is made of a silicon layer formed on the insulation layer. Voltage dependence of the resistance value of the resistor layer of the second conductivity type is reduced by controlling the voltage applied to the resistor bias electrode layer.