| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method and device that can improve uniformity of the processing, between the substrates in the continuous process by securing steadily the stability of plasma discharge. SOLUTION: The plasma processing method, that processes the substrate 6 by generating a plasma in the vacuum reacting chamber 1, comprises a plasma monitoring part 10 having plural wavelength light measuring instruments 10a-10d that monitor the change of the intensity of light for each prescribed waveband of the light that is emitted during plasma discharge, and a control part 9 that feedback controls the parameter relating to the plasma, according to the change of the intensity of light for each waveband, so as to secure uniform processing, and based on the result of the monitoring of the intensity of light for each prescribed waveband of the light emitted during plasma discharge, feedback control is made in-line. |
