发明名称 METHOD OF MANUFACTURING ELECTRODE OF COMPOUND SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an electrode having ohmic contacts to be easily formed on a compound semiconductor, especially an n-type ZnSe compound semiconductor. SOLUTION: The method of manufacturing an electrode comprises a process of etching a ZnSe substrate 1 with an etchant and then forming a protective film 3 by depositing a deposit generated by the etching reaction on the etched surface of the ZeSe substrate 1, and a process of removing the protective film 3 formed on the surface of the ZeSe substrate 1 and then forming an electrode 4 on the exposed surface of the substrate 1.
申请公布号 JP2002124486(A) 申请公布日期 2002.04.26
申请号 JP20000317948 申请日期 2000.10.18
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KATAYAMA KOJI;SAEGUSA AKIHIKO;MATSUBARA HIDEKI
分类号 H01L21/28;H01L21/306;H01L33/04;H01L33/28;H01L33/40 主分类号 H01L21/28
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