发明名称 |
METHOD OF MANUFACTURING ELECTRODE OF COMPOUND SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an electrode having ohmic contacts to be easily formed on a compound semiconductor, especially an n-type ZnSe compound semiconductor. SOLUTION: The method of manufacturing an electrode comprises a process of etching a ZnSe substrate 1 with an etchant and then forming a protective film 3 by depositing a deposit generated by the etching reaction on the etched surface of the ZeSe substrate 1, and a process of removing the protective film 3 formed on the surface of the ZeSe substrate 1 and then forming an electrode 4 on the exposed surface of the substrate 1. |
申请公布号 |
JP2002124486(A) |
申请公布日期 |
2002.04.26 |
申请号 |
JP20000317948 |
申请日期 |
2000.10.18 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KATAYAMA KOJI;SAEGUSA AKIHIKO;MATSUBARA HIDEKI |
分类号 |
H01L21/28;H01L21/306;H01L33/04;H01L33/28;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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