THIN FILM FORMING METHOD, HIGH DIELECTRIC CAPACITY FORMING METHOD, DIELECTRIC BOLOMETER AND INFRARED RAY DETECTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a thin film forming method capable of forming a ferroelectric thin film suitable for an infrared ray detecting element with high detecting sensitivity. SOLUTION: Solution wherein organic polymer compound and inorganic compound turning to material of a ferroelectric thin film are mixed by using solvent to the organic polymer compound is filtered by using a filter 102 and accumulated as material solution in a solution reservoir 104. By using pressure of N2 gas, the material solution is spin-coated on a surface of a substrate 200 from a nozzle 110. After that, the substrate 200 is thermally treated in an oxidizing gas atmosphere, the inorganic compound on the substrate is heated and reacted, and a high dielectrics film having a desired texture is formed on the substrate.