发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device composed of a high frequency circuit, which improves high frequency characteristics and is stable even when the dielectric substrate of inexpensive quality is used, and high frequency signal communication equipment that uses the semiconductor device. SOLUTION: This semiconductor device is composed of a dielectric substrate 111 for mounting a semiconductor integrated circuit 100, the semiconductor integrated circuit 100 is composed of rear side ground electrodes 105 and 108 formed on the rear side thereof and electrically divided into at least two independent areas corresponding to the integrated circuit and connecting means 104 and 107 for connecting the integrated circuit and the rear side ground electrodes and on the dielectric substrate 111, a plurality of front side ground electrodes 113 and 115 and rear side ground electrodes 114 and 116 are formed corresponding to the semiconductor integrated circuit 100.
申请公布号 JP2002124593(A) 申请公布日期 2002.04.26
申请号 JP20000315329 申请日期 2000.10.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJIMOTO KAZUHISA
分类号 H05K1/02;H01L21/60;H01L23/12 主分类号 H05K1/02
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