| 摘要 |
PROBLEM TO BE SOLVED: To form an element having different characteristics by providing SOI substrates which have different thicknesses on the same semiconductor substrate. SOLUTION: A semiconductor device comprises large current drive MIS field effect transistor, having a structure that metal source drain regions (9c, 9d) partly contacted with two counterposed side faces of the thick SOI substrate 3a provided on the semiconductor substrate 1 via an insulating film 2, source drain regions (7, 8) of impurity diffused layers are provided on the thick SOI substrate partly contacting the metal source drain regions, and gate electrodes (11, 12) are embedded in the remaining two side faces and upper surface of the thick SOI substrate via a gate oxide film 10, and a rapid MIS field effect transistor having a structure that metal source drain regions (9a, 9b) are partly contacted with counterposed two side faces of a thin SOI substrate 3b provided partly on the thick SOI substrate 3a via an SIMOX-forming oxide film 5, source drain regions (7, 8) of impurity diffused layers are provided on the thin SOI substrate partly contacted with the metal source drain region, and gate electrodes (11, 12) are embedded in the upper surface of the thin SOI substrate via a gate oxide film 10, to be made to coexist. |
