| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for relieving the coefficient difference of thermal expansion between a substrate whose material is different from a nitride semiconductor and the nitride semiconductor, and for manufacturing a nitride semiconductor film whose distortion is reduced, and to provide a method for manufacturing a nitride semiconductor substrate whose distortion is reduced. SOLUTION: A substrate whose coefficient of thermal expansion is smaller than the nitride semiconductor is stuck with a substrate whose coefficient of thermal expansion is larger than the nitride semiconductor. The nitride semiconductor is grown on it. To put it concretely, a silicon substrate is stuck to a sapphire substrate by using Al for a sticking layer. The nitride semiconductor is grown on it. The silicon substrate is removed by etching and the nitride semiconductor substrate is obtained. |
