| 摘要 |
PROBLEM TO BE SOLVED: To enable containing of a decoupling capacitor, having a large capacity by reducing a power source noise of an LSI which has high drive frequency in a semiconductor device, having an integrated circuit and the decoupling capacitor. SOLUTION: The semiconductor device comprises a first insulating film 7 formed on a semiconductor element 6, a multilayer interconnection structure having a first power source wiring 13a, a second power source wiring 13b and a signal wiring 13d formed on the film 7, a second insulating film 14 formed on the multilayer structure, a first electrode 16 of the decoupling capacitor 19 electrically connected to the wiring 13a formed on the film 14, a first dielectric film 17 of the capacitor 19 formed on the electrode 16, and a second electrode 18 of the capacitor 19 electrically connected to the wiring 13b formed on the film 17.
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