| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of holding an initial resistance value even through stresses due to a packaging or the like are applied. SOLUTION: The semiconductor device comprises a P-type thin film resistor formed of a P-type semiconductor thin film, and an N-type thin-film resistor, formed of an N-type semiconductor thin film. In this case, a resistance value change due to the application of stress is prevented. In a breeder resistance circuit, a resistance value as one unit is specified according to a resistance value formed, by laminating the P-type thin film resistor and the N-type thin film resistor. Accordingly, even by applying the stress, resistance value changes of the individual resistors are cancelled, and an accurate voltage dividing ratio can be held, and a breeder resistance circuit area can be reduced as well.
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