| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating apparatus capable of further improving intra- surface uniformity of a film thickness and an embedding performance in a plating apparatus to form a metal film such as a copper film. SOLUTION: The plating apparatus 10 is provided with a liquid bath 12 in which a plating liquid 22 is stored and is caused to flow in a prescribed direction, a copper plate 14 arranged in the liquid bath, a wafer holder 16 to hold a semiconductor wafer W so as to arrange a flat face to be film-formed to face the copper plate in the liquid bath, and a power source 34 in which the copper plate is set to an anode and the face to be film formed of the wafer is set to a cathode, the wafer holder holds the wafer so that the face to be film formed of the wafer is inclined to the prescribed direction to cause the plating liquid to flow. In this constitution, the plating liquid is caused to flow along the face to be film-formed of the wafer from one side to the other, replacement of the plating liquid near the wafer is surely conducted.
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