| 摘要 |
PROBLEM TO BE SOLVED: To improve the temperature dependence of threshold current in a semiconductor laser element. SOLUTION: On an N-GaAs substrata 11, an n-In0.49Ga0.51P clad layer 12, an n- or i-Inx2Ga1-x2As1-y2Py2 optical waveguide layer 13, a compressively strained Inx3Ga1-x3As1-y3Py3 quantum well active layer 14, a p- or i-Inx2Ga1-x2 As1-y2Py2 upper first optical waveguide layer 15, a p-Inx9Ga1-x9P first etching stopping layer 16, a p-Inx1Ga1-x1As1-y1Py1 second etching stopping layer 17, an n-In0.49Ga0.51P current constriction layer 18, and an n-GaAs cap layer 19 are stacked. The GaAs cap layer 19 and the n-In0.49Ga0.51P current constriction layer 18 on a stripe region are etched with an SiO2 film 20 serving as a mask. Subsequently, the n-GaAs cap layer 19 and the p-Inx1Ga1-x1As1-y1Py1 second etching stopping layer 17 on the bottom of a groove are removed. A p-Alz2Ga1-z2 As upper second optical waveguide layer 21, a p-In0.49Ga0.51P clad layer 22, and a p-GaAs contact layer 23 are formed thereon.
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