发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING PHOTO MASK
摘要 <p>PROBLEM TO BE SOLVED: To shorten a period for manufacturing a photo mask having a shading pattern formed of an organic film. SOLUTION: An area D2 for manufacturing the photo mask having the shading pattern formed of the organic film and areas D3-D9 for manufacturing the semiconductor integrated circuit device are arranged in the same clean room D1, and the manufacturing devices and inspection devices are shared when the photo mask and the semiconductor integrated circuit device are manufactured.</p>
申请公布号 JP2002122980(A) 申请公布日期 2002.04.26
申请号 JP20000316965 申请日期 2000.10.17
申请人 HITACHI LTD 发明人 HASEGAWA NORIO;TANAKA TOSHIHIKO;TERASAWA TSUNEO;SUGIMOTO ARITOSHI
分类号 G03F1/54;G03F1/56;G03F1/84;G03F3/10;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/54
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