| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor manufacturing method which can suppress the heat shrinkage of a low melting point glass substrate, whereas a high quality thermal oxide film is formed on the glass substrate. SOLUTION: The method of manufacturing thin film transistors each having a laminate structure including a semiconductor thin film 5, an oxide film 3 and a gate electrode comprises a step of forming an amorphous silicon semiconductor thin film 5 on an insulative substrate 0, a step of patterning the semiconductor film 5 like inlands to form element regions of the thin film transistors, and a step of forming a gate oxide film 3 on the thin film 5 before or after the element region forming step. The oxide film forming step combines a process of depositing a silicon oxide on the thin film 5 with a process of thermally oxidating the thin film 5 in a pressured atmosphere containing a gas having an oxidation power to form a silicon oxide film, thereby reducing the heating time.</p> |
