METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem that a base is difficult to satisfactorily be cleaned and that a resistance rise and wiring reliability drop due to the increase of the aspect ratio of a contact hole and a via hole in a fine semiconductor integrated circuit. SOLUTION: At the time of removing the oxide of the contact hole base 7 by argon plasma processing, the absolute value of self-bias voltage applied to a semiconductor substrate is made not less than 100 V. Thus, straightness in the wafer direction of argon ions increases. Consequently, the oxide of the contact hole base 7 can efficiently and satisfactorily be removed and stable contact resistance and stable wiring reliability can be realized.