APPARATUS FOR MEASURING TEMPERATURES OF A WAFER USING SPECULAR REFLECTION SPECTROSCOPY
摘要
An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the substrate. This in situ apparatus can be used as a feedback control in combination with a variable temperature substrate holder to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites, the variation of the temperature across the substrate can also be measured.
申请公布号
WO0233369(A1)
申请公布日期
2002.04.25
申请号
WO2001US27767
申请日期
2001.10.12
申请人
TOKYO ELECTRON LIMITED;JOHNSON, SHANE, R.;ZHANG, YONG-HANG;JOHNSON, WAYNE, L.
发明人
JOHNSON, SHANE, R.;ZHANG, YONG-HANG;JOHNSON, WAYNE, L.