发明名称 APPARATUS FOR MEASURING TEMPERATURES OF A WAFER USING SPECULAR REFLECTION SPECTROSCOPY
摘要 An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the substrate. This in situ apparatus can be used as a feedback control in combination with a variable temperature substrate holder to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites, the variation of the temperature across the substrate can also be measured.
申请公布号 WO0233369(A1) 申请公布日期 2002.04.25
申请号 WO2001US27767 申请日期 2001.10.12
申请人 TOKYO ELECTRON LIMITED;JOHNSON, SHANE, R.;ZHANG, YONG-HANG;JOHNSON, WAYNE, L. 发明人 JOHNSON, SHANE, R.;ZHANG, YONG-HANG;JOHNSON, WAYNE, L.
分类号 G01K11/00;G01K11/12;(IPC1-7):G01K11/00;G01K1/16 主分类号 G01K11/00
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