| 摘要 |
A method of manufacturing a semiconductor device, comprising preparing a semiconductor device wafer which is formed with an LSI; working the semiconductor device wafer from the back surface thereof, thereby to diminish the thickness of the semiconductor device wafer to at most 200 [mum]; forming penetrant apertures in the resulting semiconductor device wafer; forming wiring plugs (23 in FIG. 7) in the respective penetrant apertures; dicing the semiconductor device wafer, thereby to be divided into semiconductor chips (7) each of which includes the wiring plugs (23); and mounting at least two of the semiconductor chips (7) over a printed-wiring circuit board (25) through bumps (10) connected with the wiring plugs (23). Thus, the ultrathin stacked multilevel mounting of semiconductor device components can be realized at a high reliability and with a high functionality.
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