发明名称 |
Methods of processing semiconductor wafer and producing IC card, and carrier |
摘要 |
The semiconductor wafer is made thin without any cracks and warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surface of the base 1a or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier 1 in such a manner that a rear surface of the semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrier to form a wafer composite 10, and the third step of holding the carrier of the wafer composite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on the rear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2 thin.
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申请公布号 |
US2002048907(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010991750 |
申请日期 |
2001.11.26 |
申请人 |
HITACHI, LTD. |
发明人 |
MIYAMOTO TOSHIO;TSUBOSAKI KUNIHIRO;USAMI MITSUO |
分类号 |
G06K19/077;H01L21/301;H01L21/60;H01L21/68;H01L23/498;H01L23/538;(IPC1-7):H01L21/301 |
主分类号 |
G06K19/077 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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