发明名称 |
Method for forming contact hole for dual damascene interconnection of semiconductor device and resultant structure |
摘要 |
A method of forming a contact hole for a dual damascene interconnection of a semiconductor device includes forming a first photoresist layer pattern on an insulating layer of a semiconductor substrate, the first photoresist layer pattern having a first opening with a first width. A groove having the first width to a prescribed depth of the insulating layer is formed by performing an etching process using the first photoresist layer pattern as an etch mask. A second photoresist layer pattern on the insulating layer having the groove therein is formed. The second photoresist layer has a second opening with a second width, wherein the second width is substantially equal to or larger than the first width of the groove. A contact hole exposing the semiconductor substrate is formed by performing an etching process using the second photoresist layer pattern as an etch mask.
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申请公布号 |
US2002047209(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010969993 |
申请日期 |
2001.10.04 |
申请人 |
LEE SUK JOO;YANG HEE HONG;NAM JEONG LIM |
发明人 |
LEE SUK JOO;YANG HEE HONG;NAM JEONG LIM |
分类号 |
H01L21/28;H01L21/027;H01L21/768;(IPC1-7):H01L21/44;H01L23/48;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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