发明名称 |
LAYER TRANSFER OF LOW DEFECT SIGE USING AN ETCH-BACK PROCESS |
摘要 |
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.
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申请公布号 |
WO0233746(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
WO2001GB04159 |
申请日期 |
2001.09.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED |
发明人 |
CHU, JACK, OON;DIMILIA, DAVID;HUANG, LIJUAN |
分类号 |
H01L21/331;H01L21/02;H01L21/20;H01L21/336;H01L21/338;H01L21/762;H01L27/12;H01L29/161;H01L29/737;H01L29/778;H01L29/786;H01L29/812;H01L29/861;H01L31/10;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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