发明名称 METHOD FOR INSPECTING SLIP LINE OF WAFER
摘要 PURPOSE: A method for inspecting a slip line of a wafer is provided to accurately decide a cause of the slip line and to determine whether the slip line is generated, by determining seven items regarding the cause of the slip line and by synthetically overestimating the items. CONSTITUTION: A crystal structure of the wafer is transformed in the slip line. Whether the slip line is generated by oxygen deposited in a predetermined portion of the wafer during a unit process using the wafer, is determined. Whether the slip line is generated by a planarization degree of the surface of the wafer is determined. Whether the slip line is generated by the position of each fabricating apparatus wherein the respective wafers are transferred, is determined. Whether the slip line is generated by each apparatus for performing a unit process using the wafer is determined. Whether the slip line is generated by the temperature at which the wafer is heated during a unit process using the wafer is determined. Whether the slip line is generated by a crystal growth type of the wafer is determined. Whether the slip line is generated by different vendors of the wafer is determined.
申请公布号 KR20020030458(A) 申请公布日期 2002.04.25
申请号 KR20000061094 申请日期 2000.10.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, JEONG HUN;CHO, GYU CHEOL;HUH, TAE YEOL;KANG, GYEONG RIM
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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