发明名称 |
Small size, low consumption, multilevel nonvolatile memory |
摘要 |
A multilevel nonvolatile memory includes a supply line supplying a supply voltage, a voltage boosting circuit supplying a boosted voltage, higher than the supply voltage, a boosted line connected to the voltage boosting circuit and a reading circuit including at least one comparator. The comparator includes a first and a second input, a first and a second output, at least one amplification stage connected to the boosted line, and a boosted line latch stage connected to the supply line.
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申请公布号 |
US2002048187(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010972726 |
申请日期 |
2001.10.04 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
PIERIN ANDREA;GREGORI STEFANO;MICHELONI RINO;KHOURI OSAMA;TORELLI GUIDO |
分类号 |
G11C11/56;G11C16/26;G11C16/30;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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