发明名称 Small size, low consumption, multilevel nonvolatile memory
摘要 A multilevel nonvolatile memory includes a supply line supplying a supply voltage, a voltage boosting circuit supplying a boosted voltage, higher than the supply voltage, a boosted line connected to the voltage boosting circuit and a reading circuit including at least one comparator. The comparator includes a first and a second input, a first and a second output, at least one amplification stage connected to the boosted line, and a boosted line latch stage connected to the supply line.
申请公布号 US2002048187(A1) 申请公布日期 2002.04.25
申请号 US20010972726 申请日期 2001.10.04
申请人 STMICROELECTRONICS S.R.I. 发明人 PIERIN ANDREA;GREGORI STEFANO;MICHELONI RINO;KHOURI OSAMA;TORELLI GUIDO
分类号 G11C11/56;G11C16/26;G11C16/30;(IPC1-7):G11C11/34 主分类号 G11C11/56
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