发明名称 |
Method of patterning sub-0.25lambda line features with high transmission, attenuated phase shift masks |
摘要 |
A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of "imaging elements." The imaging elements are pi-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form "halftone-like" imaging patterns. The placement of the ASBs and the width thereof are such that none of the pi-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.
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申请公布号 |
US2002048708(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010976336 |
申请日期 |
2001.10.15 |
申请人 |
ASML MASKTOOLS NETHERLANDS B.V. |
发明人 |
CHEN J. FUNG;CALDWELL ROGER;LAIDIG TOM;WAMPLER KURT E. |
分类号 |
G03F1/00;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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地址 |
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