Non-volatile ferroelectric memory for use as random access memory with main cells arranged as lines with pairs of part word lines from a first and second part word line runs read/write data processes in a cell array.

摘要

A cell array block has multiple sub-cell arrays available. Between upper (subT) and lower (subB) adjacent sub-cell arrays there is a read amplifier. Each sub-cell array has bit lines (TopB/L,BotB/L), main cells (MC) linked to these bit lines, a reference cell (RC) linked to the main cells and a column selector. An Independent claim is also included for a method for triggering a non-volatile ferroelectric memory.