| 摘要 |
PURPOSE: A chemical mechanical polishing and cleaning method is provided to minimize an agglomeration phenomenon of slurry and to improve the surface of a wafer, by varying acidity of a buffer from the level of a slurry particle to the level of neutral deionized water according to the interval of time in which the slurry particle is eliminated from a buffer station. CONSTITUTION: A polishing wafer is loaded into a loading station. The wafer is mainly polished in a polishing pad by using a dissolvent containing slurry of which the pH is controlled. A control solution which is a diluted solution of an acid or base is used to remove the slurry on the polishing surface of the wafer. The resultant structure is buffed by deionized water. The wafer is scrubbed to secondly eliminate the particles on the surface of the wafer. A dipping process is performed to remove metal ions on the wafer. The wafer is unloaded.
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