| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to fabricate the same capacitor by performing the same self-aligned contact process as used in fabricating a conventional dynamic random access memory(DRAM) device, and to prevent plugs from being short-circuited by eliminating the void. CONSTITUTION: An isolation region is formed to define an active region and a field region in a semiconductor substrate(31). A plurality of logic gates(33a) and DRAM gates(33b) are formed in a predetermined region of the semiconductor substrate. An insulation layer sidewall(35) is formed on both side surfaces of the logic gate and the DRAM gate. A source/drain region(37,38) is formed in the substrate of the active region at both sides of the insulation layer sidewall by an impurity ion implantation process using a mask exposing the substrate in a logic region and a DRAM peripheral region. A salicide layer is formed on the logic gate and the source/drain region. The first insulation layer is deposited on the substrate. A predetermined depth of the first insulation layer is removed by using a mask exposing the substrate of the field region defined in a DRAM cell region so that a void formed between the DRAM cell gates is eliminated. The second insulation layer is deposited on a portion where the first insulation layer is removed. The second and first insulation layers are removed to form a trench. A conductive material is filled in the trench to form a plug(47).
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