Production of porous silicon used in the production of an optoelectronic component comprises chemically etching a silicon sample in an anodic oxidation process with localized etching

摘要

Production of porous silicon comprises chemically etching a silicon sample (9) in an anodic oxidation process with localized etching taking place on an edge (10) or tip through a field concentration effect. Preferred Features: The edge or tip is a structure of the surface of the silicon sample. The silicon sample acts as the electrode. Recesses are produced in the conducting layer on the sample before carrying out anodic oxidation.