发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
摘要 A method of manufacturing a semiconductor device comprises the step of supplying germanium-containing source gas to a semiconductor substrate to form germanium-containing amorphous semiconductor film on the semiconductor substrate. A semiconductor device having a novel structure is provided by the method.
申请公布号 WO0233738(A1) 申请公布日期 2002.04.25
申请号 WO2000JP07145 申请日期 2000.10.16
申请人 HITACHI, LTD.;MIYAUCHI, AKIHIRO;INOUE, YOUSUKE;ANDOU, TOSHIO 发明人 MIYAUCHI, AKIHIRO;INOUE, YOUSUKE;ANDOU, TOSHIO
分类号 H01L21/336;H01L29/417;(IPC1-7):H01L21/205;H01L29/78;H01L29/737 主分类号 H01L21/336
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