| 发明名称 |
Process for producing semiconductor integrated circuit device |
| 摘要 |
In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.
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| 申请公布号 |
US2002048941(A1) |
申请公布日期 |
2002.04.25 |
| 申请号 |
US20010987850 |
申请日期 |
2001.11.16 |
| 申请人 |
KATO HISAYUKI;ABE HISAHIKO;NISHIHARA SHINJI;YAMAZAKI MASAHITO;YOSHIZUMI KEIICHI |
发明人 |
KATO HISAYUKI;ABE HISAHIKO;NISHIHARA SHINJI;YAMAZAKI MASAHITO;YOSHIZUMI KEIICHI |
| 分类号 |
H01L21/8247;C23C14/08;C23C14/34;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/8247 |
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