| 发明名称 |
Positive photoresist composition |
| 摘要 |
Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.
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| 申请公布号 |
US2002048720(A1) |
申请公布日期 |
2002.04.25 |
| 申请号 |
US20010826850 |
申请日期 |
2001.04.06 |
| 申请人 |
SASAKI TOMOYA;MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO |
发明人 |
SASAKI TOMOYA;MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO |
| 分类号 |
C08L33/00;C08L33/06;C08L33/14;C08L35/00;C08L43/04;G03F7/004;G03F7/039;G03F7/075;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
C08L33/00 |
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