| 摘要 |
PURPOSE: A method for fabricating a photomask is provided to fabricate photomasks with improved control of gate line width wafers, by determining a mask correction unit based on pattern space dependency in the pattern obtained in the photolithographic process and etch process, by correcting the mask fabrication design data utilizing the mask correction unit, and by fabricating photomasks using photolithographic equipment. CONSTITUTION: Mask correction units are settled based upon the pattern space dependency in the pattern obtained in the photolithographic process and etch process. The mask fabrication design data(1) is corrected based upon the mask correction units. Parameter settlement regarding the photolithographic equipment is corrected according to an XY difference based upon the pattern space dependency. |
