发明名称 |
High pressure processing chamber for semiconductor substrate |
摘要 |
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.
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申请公布号 |
US2002046707(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010912844 |
申请日期 |
2001.07.24 |
申请人 |
BIBERGER MAXIMILIAN A.;LAYMAN FREDERICK PAUL;SUTTON THOMAS ROBERT |
发明人 |
BIBERGER MAXIMILIAN A.;LAYMAN FREDERICK PAUL;SUTTON THOMAS ROBERT |
分类号 |
H01L21/027;H01L21/00;H01L21/304;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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