发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
The semiconductor device comprises: a conducting layer including: a channel region; a source region and a drain region sandwiching the channel region; and a body region connected to the channel region and being adjacent to the source region and the drain region; a gate electrode formed above the channel region interposing a gate insulation film therebetween; a dummy electrode formed on the body region near the interface between at least the drain region and the body region, and electrically insulated with the gate electrode; and a body contact region formed in the body region except a region where the dummy electrode is formed. The gate electrode and the dummy electrode are electrically insulated with each other, whereby the semiconductor device having body contacts can have a gate capacitance much decreased. Accordingly, deterioration of the speed performance of the transistors can be suppressed.
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申请公布号 |
US2002048972(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010815010 |
申请日期 |
2001.03.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
YAMAGUCHI SEIICHIRO;KAI MITSUAKI;AMANO ISAO |
分类号 |
H01L21/3205;H01L23/52;H01L29/417;H01L29/423;H01L29/45;H01L29/78;H01L29/786;(IPC1-7):H01L21/338;H01L21/20;H01L21/44;H01L21/476;H01L23/48;H01L29/40 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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