发明名称 PLANARIZATION METHOD ON A DAMASCENE STRUCTURE
摘要 A planarization method is used in a dual damascene structure. At the stage that a dual damascene structure is semi-formed on a semiconductor substrate but before a planarization process, the planarization method starts by forming a dielectric layer on a metal layer, which is to be polished. A portion of the dielectric layer other than the dual damascene structure is removed by etching. A CMP process is performed to planarize the substrate and exposes an inter-metal dielectric layer.
申请公布号 US2002048934(A1) 申请公布日期 2002.04.25
申请号 US19980143267D 申请日期 1998.08.28
申请人 SHIEH MING-SHIOU;CHIN HSIAO-SHENG 发明人 SHIEH MING-SHIOU;CHIN HSIAO-SHENG
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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