发明名称 |
PLANARIZATION METHOD ON A DAMASCENE STRUCTURE |
摘要 |
A planarization method is used in a dual damascene structure. At the stage that a dual damascene structure is semi-formed on a semiconductor substrate but before a planarization process, the planarization method starts by forming a dielectric layer on a metal layer, which is to be polished. A portion of the dielectric layer other than the dual damascene structure is removed by etching. A CMP process is performed to planarize the substrate and exposes an inter-metal dielectric layer.
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申请公布号 |
US2002048934(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US19980143267D |
申请日期 |
1998.08.28 |
申请人 |
SHIEH MING-SHIOU;CHIN HSIAO-SHENG |
发明人 |
SHIEH MING-SHIOU;CHIN HSIAO-SHENG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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