发明名称 |
Potential detecting circuit |
摘要 |
In a detector included in a VPP generating circuit in a DRAM, an external power supply potential is applied to the gate of an N-channel MOS transistor for regulating a through current of an inverter for outputting an inversion signal of an output signal of a comparator. Since a drain-source voltage of the N-channel MOS transistor can be set to be lower than a threshold voltage Vthn of the N-channel MOS transistor, an operation margin of the detector under conditions of a low voltage and a low temperature is made wider as compared with a conventional technique.
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申请公布号 |
US2002047731(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010809212 |
申请日期 |
2001.03.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OKAMOTO MAKO;TAITO YASUHIKO;MORISHITA FUKASHI;YAMAZAKI AKIRA;AKIYAMA MIHOKO;FUJII NOBUYUKI |
分类号 |
G11C11/407;G05F1/10;G11C5/14;G11C11/4074;H02M3/07;(IPC1-7):H03K5/153 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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