发明名称 Semiconductor assisted metal deposition for nanolithography applications
摘要 An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
申请公布号 US2002047180(A1) 申请公布日期 2002.04.25
申请号 US20010858791 申请日期 2001.05.16
申请人 ARGONNE NATIONAL LABORATORY 发明人 RAJH TIJANA;MESHKOV NATALIA;NEDELIJKOVIC JOVAN M.;SKUBAL LAURA R.;TIEDE DAVID M.;THURNAUER MARION
分类号 B82B1/00;H01L21/768;(IPC1-7):H01L29/00 主分类号 B82B1/00
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