| 摘要 |
<p>A plasma reactor apparatus (100) includes plasma generating assembly (150) that is moveable between a first and second position. The plasma generating assembly (150) includes an inductive coil assembly (216) that is coupled to a source of RF energy. In the first position, acces is provided for mounting a wafer (101) onto a chuck assembly (250). In the second position, the plasma generating assembly (150) and the substrate chuck assembly (250) form an enclosed area (300) about the wafer (101). Process gas is used to fill the enclosed space (300) while a vacuum is created in the enclosed space (300). RF energy is applied to the inductive coil (218) and plasma is formed in the enclosed space (300) in order to process the wafer (101).</p> |
