METHOD FOR FABRICATING SEMICONDUCTOR DEVICE CAPABLE OF RELIABLY FILLING HIGH-STEPPED GAP

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to reduce plasma damage and to decrease the number of processes, by using an atomic layer deposition(ALD) method so that trenches having different aspect ratios or a high-stepped gap is reliably filled without a void. CONSTITUTION: A semiconductor substrate(100) is etched to form a trench. The inside of the trench is filled with a buried insulation layer(108) by using an ALD method. Gate stack patterns are formed on the buried insulation layer and the semiconductor substrate. A gap exposing the semiconductor substrate and the buried insulation layer among the gate stack patterns is formed. The gap is filled with the first buried insulation layer by using an ALD method.