| 摘要 |
PURPOSE: A semiconductor device is provided to improve a lineality characteristic of a capacitor and to stabilize an analog circuit, by easily eliminating the need to change a great part of a process. CONSTITUTION: A lower electrode(62) is composed of a polysilicon layer(54) and a silicide layer which are stacked in a region of a semiconductor substrate(51) insulated by the first insulation layer. An insulation layer sidewall(56) is formed on both side surfaces of the silicide layer and the polysilicon layer. The second insulation layer is formed on the semiconductor substrate. An upper electrode(61a) made of metal is formed in a region of the second insulation layer on the lower electrode.
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