发明名称 Nonvolatile memory and semiconductor device
摘要 The invention includes a control register (CRG) for providing instructions as to basic operations such as writing, erasing, reading, etc., a boosted voltage attainment detecting circuit for detecting whether a voltage boosted by a booster circuit has reached a desired level, a circuit which counts the time required to apply each of write and erase voltages, and a circuit which detects the completion of the writing or erasing. Respective operations are automatically advanced by simple setting of the operation instructions to the control register. After the completion of the operations, an end flag (FLAG) provided within the control register is set to notify the completion of the writing or erasing.
申请公布号 US2002048193(A1) 申请公布日期 2002.04.25
申请号 US20010970675 申请日期 2001.10.05
申请人 HITACHI, LTD. 发明人 TANIKAWA HIROYUKI;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;KAWAJIRI YOSHIKI;FUJITO MASAMICHI
分类号 G11C16/02;G06F15/78;G11C16/06;G11C16/14;G11C16/30;G11C16/34;(IPC1-7):G11C16/16 主分类号 G11C16/02
代理机构 代理人
主权项
地址