| 摘要 |
An objective of the present invention is to provide a method of fabricating a semiconductor device comprising a MIS field-effect transistor that makes it possible to prevent damage to edge portions of a gate oxide layer during ion implantation and also prevents the thickness of edge portions of a titanium silicide layer from becoming too great. Before n--type regions 16 are formed, a silicon nitride layer 24 is formed to extend from corner portions 42 of a gate electrode 26 and over side surfaces of a gate oxide layer 20. Ion implantation is used to form the n--type regions 16. The silicon nitride layer 24 has been positioned so as to shield the side surfaces of the gate oxide layer 20. This ensures that ions do not strike the side surfaces of the gate oxide layer 20 during the implantation. When a titanium silicide layer 28 is formed on the upper surface of the gate electrode 26, the silicide reaction of the silicon nitride layer 24 on the side surfaces of the gate electrode 26 is prevented.
|
