发明名称 Transistor circuit
摘要 MOS transistors A and B form a transistor circuit (an inverter in this case). A MOS transistor D is one for interrupting leakage current that has a channel length longer than those of the MOS transistors A and B. Under the action of an enable terminal (Enable), the MOS transistor D conducts only while the circuit is operated, and does not conduct and thereby interrupts leakage current while the circuit is in a standby state. A MOS transistor C does not produce effect while the circuit is operated, and makes the potential of an output terminal (Output) a high potential or a low potential (not intermediate potential) only while the circuit is in the standby state. Therefore, the circuit controls unnecessary through-transistor current of a standby type circuit in a succeeding stage, which current is conventionally caused at an intermediate potential during standby.
申请公布号 US2002047733(A1) 申请公布日期 2002.04.25
申请号 US20010953907 申请日期 2001.09.18
申请人 SONY CORPORATION 发明人 SHIMIZUME KAZUTOSHI
分类号 H01L21/8238;H01L27/092;H03F1/02;H03F3/30;H03K19/00;(IPC1-7):H01L29/80 主分类号 H01L21/8238
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