| 摘要 |
PURPOSE: A method for fabricating a plug of a semiconductor device is provided to increase yield, by reducing a defective product caused by an electrical short-circuit between contact plugs and increased resistance. CONSTITUTION: At least a pair of patterns are formed on a semiconductor substrate(50). An interlayer dielectric is formed on the semiconductor substrate to fill a groove between the patterns. A predetermined portion of the interlayer dielectric is eliminated to form a contact hole exposing a predetermined portion of the substrate. An undoped polysilicon layer(571) is formed on the insulation layer including the contact hole, having such a thickness not to completely fill the contact hole. The undoped polysilicon layer is doped to have conductivity. A conductive layer is formed on the polysilicon layer having conductivity, having such a thickness to completely fill the contact hole. The conductive layer and the polysilicon layer are left only in the contact hole to form a plug(58,570).
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