发明名称 |
Semiconductor device |
摘要 |
A semiconductor device having a PHS layer on the back surface thereof, preventing from a short circuit between a bonding wire and a first metal layer. Forming catalyst layer on a bottom of a first separation groove formed in the front surface of a semiconductor substrate, forming the first metal layer selectively in the first separation groove by an electroless plating technique using the catalyst layer as a catalyst. |
申请公布号 |
US2002048903(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010986325 |
申请日期 |
2001.11.08 |
申请人 |
KOSAKI KATSUYA;NAKANO HIROFUMI;KUNII TETSUO |
发明人 |
KOSAKI KATSUYA;NAKANO HIROFUMI;KUNII TETSUO |
分类号 |
H01L21/301;H01L21/288;H01L21/68;H01L21/78;H01L23/367;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|