METHOD AND APPARATUS FOR LOW ENERGY ELECTRON ENHANCED ETCHING AND CLEANING OF SUBSTRATES.

摘要

A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical suport located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.