| 摘要 |
PURPOSE: A method for fabricating a field oxide layer of a semiconductor device is provided to increase a field threshold voltage by performing a channel stop ion implantation process in a small region while using a spacer, and to improve an isolation characteristic by increasing a volume ratio of the field oxide layer. CONSTITUTION: A pad oxide layer(12) and a nitride layer that are patterned to define a field region are formed on a silicon substrate(11). After a dual spacer is formed on the etch sidewall of the patterned pad oxide layer and nitride layer, a channel stop region(17) is formed in the silicon substrate of the field region through a channel stop ion implantation process. An oxide layer is formed on the resultant structure including the dual spacer. After a field oxide process is performed, the oxide layer and the dual spacer are eliminated. A sacrificial oxide layer is grown and removed to form the field oxide layer(19) in the silicon substrate of the field region.
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