| 发明名称 |
Plasma enhanced chemical processing reactor and method |
| 摘要 |
An apparatus for processing a substrate comprising a processing chamber and a substrate support system comprising an electrostatic chuck having a body portion and a substrate support surface and one or more arms extending from the body portion to mount the electrostatic chuck to a side wall portion of the processing chamber is provided.
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| 申请公布号 |
US6375750(B1) |
申请公布日期 |
2002.04.23 |
| 申请号 |
US20000575217 |
申请日期 |
2000.05.18 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
VAN OS RON;DURBIN WILLIAM J.;MATTHIESEN RICHARD H.;FENSKE DENNIS C.;ROSS ERIC D. |
| 分类号 |
C23C16/50;C23C16/44;C23C16/455;C23C16/507;H01J37/32;H01L21/205;H01L21/302;H01L21/31;H01L21/316;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/50 |
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